Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides. molecular-beam heteroepitaxy of nominally 1. 0 eV bandgap bismide on Ge substrates is comprehensively investigated. https://ashleyshomestores.shop/product-category/3-piece-reclining-sectional-sofa-with-chaise/